datasheet using the terminology BFA9 – BFA0 to denote the 10 address bits required to Added AT45DBD-SU to ordering information and corresponding. Explore the latest datasheets, compare past datasheet revisions, and confirm part lifecycle. AT45DBD-SU Datasheet, 45DB 32M Flash Memory Datasheet, buy AT45DBD-SU.
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Its 34, bits of memory are organized as 8, pages of bytes or bytes each. The buffers allow the receiving of data while a page in the main Memory is being reprogrammed, as well as writing a continuous data stream To allow for simple in-system reprogrammability, the AT45DBD does not require high input voltages for programming.
The device operates from a single power supply, 2. The ground reference for the power supply. CC voltages may produce spurious results and should not be attempted.
Memory Array To provide optimal flexibility, the memory array of the AT45DBD is divided into three levels of granularity comprising of sectors, blocks, and pages. All program operations to the DataFlash occur on a page by page basis. The erase operations can be performed at the chip, sector, block or page level When the end of a page in the main memory is reached during a Continuous Array Read, the device will continue reading at the beginning of the next page with no delays incurred AT45DBD 6 specification.
The Continuous Array Read bypasses both data buffers and leaves the specification A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin SO. It is necessary that the page in main memory that is being programmed has been previously erased using one of the erase commands Page Erase or Block Erase. During this time, EP The Chip Erase command will not affect sectors that are protected or locked down; the contents of those sectors will remain unchanged.
Only those sectors that are not protected or locked down will be erased.
PIC32 -> Atmel SPI Flash Memory (AT45DBD) | Microchip
Disable Sector Protection commands. If the device is power cycled, then the software controlled protection will be disabled. Once the device is powered up, the Enable Sector Protection command should be reissued if sector pro- tection is desired and if the WP pin is not used. Sector Number Protected Unprotected Table Instead, a combination of temporarily unprotecting individual sectors along with dis- abling sector protection completely will need to be implemented by the application to ensure that the limit of 10, cycles is not exceeded.
Sector Lockdown Register to determine the status of the appropriate sector lockdown bits or bytes and reissue the Sector Lockdown com- mand if necessary.
Command Sector Lockdown Figure Therefore, the contents of the buffer 1 will be altered from its previous state when this command is issued. If the device P CS pin transitions from a low to a high state.
Dur- ing the transfer of a page of data t monitored to determine whether the transfer has been completed.
The device density is indicated using bits and 2 of the status register. For the AT45DBD, the four bits are The decimal value datashee these four binary bits does not equate to the device density; the four bits represent a combinational code relating to differing densities of DataFlash devices RDPD down, the device will return to the normal standby mode.
Command Resume from Deep Power-down Figure These legacy commands are not recommended for new designs. The regulator needs to supply this peak current requirement. An under specified regulator can cause current starvation. Besides increasing system noise, current starvation during program- ming or erase can lead to improper operation and possible data corruption.
During power-up, the internal Power-on Reset circuitry keeps the device in Waveform 3 and waveform 4 illustrate general timing diagram for RapidS serial interface. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page within the entire array.
The shipping carrier option is not marked on the devices. Standard parts are shipped with the page size set to bytes. The user is able to configure these parts to a byte page size if desired. Parts ordered with suffix SL are shipped in bulk with the page size set to bytes. Parts will have a or SL marked on them Mismatch of the upper and lower dies and resin burrs aren’t included.
Determines the true geometric position. Values b,C apply to plated terminal.
AT45DB321D-SU – 45DB321 32M Flash Memory Datasheet
The standard thickness of the plating layer shall measure between 0. Lead coplanarity is 0. Changed the Product Version Code to Added errata regarding Chip Erase.
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AT45DBD-SU Atmel, AT45DBD-SU Datasheet
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Download datasheet 2Mb Share this page. Copy your embed code and put on your site: Continuous At45eb321d-su Capability through Entire Array. Hardware and Software Data Protection Features. RapidS serial interface is SPI com. Its 34, bits of memory are organized as. In addition to the main memory, the. Unlike conventional Flash memories that are accessed randomly with multiple.